PhD

Process Technology

• Ge and III-V CMOS scaling
• Post-CMOS nano
• Reliability research at imec
• Memories
• Power devices
• GaN Power Converters
• Nanoscale properties of new materials for emerging memory de
• Ion-solid interactions
• Probing semiconductor devices on the atomic scale
• Packaging and interconnection
• SiGe-based MEMS
• RF-MEMS
• Advanced lithography
• Simulation of wafer plating uniformity
• Superfilling of 3D via structures with alternative metals
• Diamond bit cutting for metal bonding

Advanced lithography

Imec develops advanced lithography techniques to build transistors with gates of 22nm and smaller. Lithography is an important step of the chip production. The silicon wafer is exposed to light through a mask. The mask carries the pattern of the transistors and the electronic circuits built by those transistors. The smaller the wavelength of the light that is used, the finer that pattern can be, and the smaller the transistors on the final chip will be.
There are many challenging opportunities for PhD research in this area related to double patterning, EUV and resists.

Over the past decades Optical Lithography has become increasingly complex and expensive. As a consequence frequency multiplication techniques have been explored and have already been implemented in manufacturing. Recently, directed-self assembly (DSA) based on block co-polymer chemistry has been identified as a promising candidate for more effective frequency multiplication at very small dimensions. This is the first time a true bottom-up approach is being explored for high resolution patterning. Two main approaches for implementation of this technology have thus far been proposed in literature. One is based on using topography as guide structure for directing the self-assembly process (grapho-epitaxy). The other is based on chemical surface modification (chemo-epitaxy). Many outstanding issues need to be solved before DSA will be ready for implementation in device manufacturing. One of the most challenging is the demonstration of the possibility to execute this process with sufficient pattern fidelity and low defectivity. The goal of the project is to investigate the boundary conditions that are required to meet this objective for both grapho-and chemo-epitaxy flows.
As your main activity, you will set up a process flow for implementation of grapho-epitaxy. A detailed understanding needs to be built up of the thermodynamics that play a role in the DSA pattern definition process. Also you will actively contribute to set up methods for defect metrology at the very small target dimensions. Your work will consist of setting up experiments, running them in our clean room or through simulation and analyzing the acquired data. Also the interaction with the material suppliers for formulation of dedicated DSA chemistries, equipment suppliers for processing or defect metrology and partnering universities will be part of your work.
The topic is best suited for students with a degree in chemistry, nano-technology, and/or materials science.

Contact person: Guido Groeseneken