CMORE - heterogeneous integration

Power electronics

• GaN epitaxial layer growth
• GaN devices
• GaN device integration

Invent - Imec is improving the design and production of GaN high electron mobility transistors (HEMT) for the RF/MM wave range, and high-voltage GaN power switching devices.

Achieve - Optimizing the material, the contact processing, and the ex-situ device passivation has led to dispersion-free devices with excellent output power density and gain up to the X band.