Scaling-driven nanoelectronics
Supporting expertise: ultra-clean processing, characterization, reliability
Invent - Imec examines the reliability of new high-k/metal gate stacks and new device architectures such as FinFETs. Other topics of research are electromigration and stress induced voiding in Cu metallization, reliability in low-k dielectrics, and electrostatic discharge (ESD) protection in high-k/metal gates, FinFET devices, and RF CMOS circuits. IMEC also studies the reliability of MEMS and advanced packages.
Achieve - In 2008, imec further extended its MEMS test and reliability instruments and methods. We can now apply mechanical actuation with in-situ electrical characterization, allowing us, for example, to measure force-contact resistance curves. Imec also implemented a new method to measure the hermeticity of MEMS packages using mechanical actuation. And we developed a unique MEMS full-wafer inspection and functional yield measurement, based on differential interference contrast. We successfully demonstrated this setup on our 11 megapixel SiGe-micromirrors, measuring yield numbers over 99%. Imec also further automated its wafer-level MEMS metrology setup. And a new setup was built to study the impact of electrostatic discharge, allowing in-situ monitoring of the electrical and mechanical behavior of MEMS.
Another highlight is the 4-point bending measurement method that we used to study the stress and damage induced by thinning wafers. The 4-point bending instrument was also adapted to allow the combination of bending tests with in-situ electrical measurements. This was applied for the first time to study the reliability and strength of 3D stacked ICs and of copper connections in stretchable substrates.